Journal of New Technology and Materials
Volume 8, Numéro 2, Pages 16-23
2018-12-27
Authors : Touati Zineeddine . Hamaizia Zahra . Messai Zitouni .
In This work, we propose a novel TiO2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with 60 nm gate-length and high-k TiO2 gate dielectric. The DC and RF characteristics of the proposed AlGaN/GaN MOS-HEMT structure are analyzed by using TCAD Silvaco Software. The present TiO2/AlGaN/GaN MOS-HEMT design has shown maximum extrinsic transconductance gm of 198.3 mS/mm, saturated IDS density at VGS = 4 V of 668.4 mA/mm, maximum IDS density of 677.9 mA/mm, unity-gain cut-off frequency (ft) of 229.8 GHz, and with a record maximum oscillation frequency fmax of 627.8 GHz. The Power performance characterized at 10 GHz to give output power (Pout) of 22.3 dBm, power gain of 13.1 dB, and power-added efficiency (PAE) of 26.5%.
TiO2/AlGaN/GaN, MOS-HEMT, high-k, TiO2, Regrown Source/Drain, SILVACO.
Douara Abdelmalek
.
Djellouli Bouaza
.
Rabehi Abdelaziz
.
Ziane Abderrezzak
.
Belkadi Nabil
.
pages 19-24.
N. Mokdad
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K. Zitouni
.
A. Kadri
.
pages 89-96.
Azizi Mounir
.
Azizi Cherifa
.
pages 28-32.
Boukal Nassim
.
Atioui Samira
.
ص 09-42.
Souhila Rabhi
.
Hayet Belkacemi
.
Naima Lahouazi
.
Fatine Djabelkhir
.
Nawal Moussi
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Drifa Benhammouche
.
Leila Ait Brahem
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pages 21-28.