Journal of New Technology and Materials
Volume 3, Numéro 1, Pages 28-32
2013-06-30
Authors : Azizi Mounir . Azizi Cherifa .
In this work we present a new nonlinear approach for the calculation of the static characteristics of MESFET GaAs with submicron gate. First, we compare the results of the numerical simulations of the three main models for the MESFETs with submicron gate : Ahmed [1], Islam [2] and Memon [3] with experimental results. Then we propose a new approach that takes into account the surface states of the Schottky junction through a new mobility law for the determination of the output characteristics. The thermal effect is also represented in the mobility law. The comparison of our model with the three previous models referring to the experimental data shows that our approach gives the most accuracy result. Also, the proposed model can be used in the case of logic or analog circuits based on submicron GaAs MESFET.
MESFET; GaAs; nonlinear models; interface states; submicron gate.
Touati Zineeddine
.
Hamaizia Zahra
.
Messai Zitouni
.
pages 16-23.
Boukal Nassim
.
Atioui Samira
.
ص 09-42.
بن علي برناط هالة
.
ص 46-68.
Mellal Saida
.
Azizi Cherifa
.
Zaabat Mourad
.
Ziar Toufik
.
Kaddour Chahrazed
.
Azizi Mounir
.
pages 12-17.
مسنادي محمد
.
بن مير محمد الطيب
.
قعيد ابراهيم
.
ص 155-176.