Journal of New Technology and Materials
Volume 4, Numéro 2, Pages 19-24
2014-12-25
Authors : Douara Abdelmalek . Djellouli Bouaza . Rabehi Abdelaziz . Ziane Abderrezzak . Belkadi Nabil .
We report some results the drain current characteristics of AlGaN/GaN HEMT(High Electron Mobility Transistor). on are simulated by changing the different device parameters such as Al content x and the barrier thickness for different values of the gate voltage using Tcad-Silvaco numerical simulation software. Drift–diffusion model has taken for simulating the proposed device. we use SiC as a substrate for this structure, The channel is made of GaN and source-drain spacing is 1 µm.
AlGaN/GaN, HEMT, Tcad-Silvaco
Touati Zineeddine
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Hamaizia Zahra
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Messai Zitouni
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pages 16-23.
N. Mokdad
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K. Zitouni
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A. Kadri
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pages 89-96.
Mazari Halima
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pages 97-101.
Bechlaghem Sara
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Zebentout Baya
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Benamara Zineb
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pages 110-113.
N. Mokdad
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K Zitouni
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A. Kadri
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pages 53-58.