Journal of New Technology and Materials
Volume 5, Numéro 1, Pages 7-10
2015-06-30

Performance Study Of A Hemt For Power Application



Authors : Kourdi Zakarya . Bouazza Benyounes . Guen-bouazza Ahlem . Khaouani Mohamed .

Abstract

In this paper, we present a simulation results of the design and characterization for GaN double-gate transistor, that has T-gate geometries with high-electron-mobility to realize high performance using silvaco TCAD Software, this transistor is used for amplifiers application. We have obtained an excellent current density, almost 817mA/mm, a peak extrinsic transconductance of 915mS/mm at VDS=2 V, and cutting frequency cutoffs of 878 GHz, and maximum frequency of 982 GHz.

Keywords

HEMT, GaN, power application, Tcad-Silvaco

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