Journal of New Technology and Materials
Volume 4, Numéro 1, Pages 134-137
2014-06-30

Monte Carlo Model To Study Alxga1-xn Nanostructure Under An Electron Beam. Influence Of Aluminum Mole Fraction



Authors : Leghrib L. . Nouiri A. .

Abstract

In the present paper, a Monte Carlo calculation model of AlxGa1-xN nanostructure is presented in order to describe the influence of different parameters such as the accelerating energy and primary current of electron beam as well as the influence of aluminum mole fraction. The carrier excess generated during the collision of the incident electron with the atoms of the material (random walk) is calculated as a function of depth. The radiative recombination of electron hole pairs can be collected as a light (CL signal). Numerical results obtained are compared with experimental data.

Keywords

Gallium nitride, Monte Carlo, Cathodoluminescence, nanostructure, quantum well.

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