Journal of New Technology and Materials
Volume 4, Numéro 1, Pages 50-52
2014-06-30
Authors : Lamrani S . Guittoum A. . Hadjersi T. . Bouanik S. . Mebarki M. . Benbrahim N. .
Perpendicular Silicon nanowires (SiNWs), having 20 micrometer in length, were fabricated by metal assisted chemical etching of n-type Si(100) wafers in aqueous HF-solution. In a second step, NiFe films were electrodeposited onto theses SiNWs. The structure and magnetic properties of as deposited NiFe layers were studied by X ray diffraction (XRD) and vibrating sample magnetometer (VSM). From X-ray diffraction, the FCC NiFe structure was evidenced with a lattice constant, a, equal to 3.5270 Å. From hysteresis curves, we compute the coercive field, Hc, values. We found that the Hc // values range from 102 Oe to 236 Oe.
Silicon nanowires, magnetic properties, NiFe layer,
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