Journal of New Technology and Materials
Volume 5, Numéro 1, Pages 32-35
2015-06-30
Authors : Merzougui Amina . Latreche Saida . Bouchekouf Seloua .
In this work, we proceeded to the analysis of C(V) characteristics of MOS capacitors (Metal-oxide-semi-conductor) with metal gates. Within the framework of the search for new materials, we have studied C(V) characteristics of structures containing high permittivity oxide (high-k)- the HfO2 in our case- to replace the ultra-thin conventional oxide layer (SiO2 ) which reaches its physical and technological limits (less than 1 nm thickness). In these same structures, the stacking of grid is deposited on a substrate with high mobility carriers (electrons and holes). In fact: The germanium (Ge) and III-V materials [1]. The obtained results were largely compared with others simulated and experimental ones.
MOS capacitors, C(V) characteristics, High permitivity, high mobility carriers, Schrodinger.
Aissou Siham
.
Bouzidi Nedjima
.
Chafi-souici Zahia
.
Cormier Laurent
.
Merabet Djoudi
.
pages 1-6.
كبير بن عيسى
.
عباس مراد
.
ص 167-184.
Bouaraki Mouloud
.
Recioui Abdelmadjid
.
pages 102-109.
Safi Brahim
.
Aboutair Amel
.
Saidi Mohammed
.
Ghernouti Youcef
.
Oubraham Chahrazade
.
pages 40-46.