Communication science et technologie
Volume 21, Numéro 2, Pages 44-54
2023-12-25
Authors : Nemmour Soumia . Kail Fatiha . Chahed Larbi .
Hydrogenated amorphous silicon carbide (a-Si1−xCx: H) thin films were prepared by plasma-enhanced chemical vapor deposition rf-PECVD technique from the gas mixture of CH4/ SiH4/H2. The effect of methane flow rate [CH4] on microstructure and optical properties of the films have been investigated using infrared IR spectroscopy, Raman spectroscopy, and optical transmission measurements. A multiphase structure of grown materials is showed by Raman analyses. IR spectra show an increase in the peak intensity of Si-Hn, Si-C, C-Hn modes with increasing [CH4] from 20-60 sccm, revealed the increase in total hydrogen and carbon content in the films. The optical band gap shows increasing trend due to carbon incorporation. High [CH4] caused inhomogeneity in the material as reflected by the decrease in disorder parameter, and low refractive index. Methane flow rate has a strong influence on the structure of the films and tunes their optical parameters.
Amorphous silicon carbide (SiC) ; thin-films ; PECVD ; Hydrogen ; Gap.
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