Journal of New Technology and Materials
Volume 4, Numéro 1, Pages 103-105
2014-06-30
Authors : Benahmed A. . Aissat A. . Bouzaki M. . Bestam R. . Chaouchi S. . Bellil W. .
The analysis of the electronic states of a quantum dot of InAs grown on a GaAs substrate has been studied for different geometries. We did the calculation with each type of geometry we based on the Schrödinger equation for stationary particle and we used "Comsol" for calculations. We calculated energy values as a function of each of the parameters: length, width and thickness of the wetting layer where other parameters are held constant.
hétérostructures InAs / GaAs, the Schrödinger equation, simulation, COMSOL.
Chenine Chahrazad
.
Sarnou Dallel
.
pages 517-536.
Hamadou A.
.
Thobel Jean-luc
.
Lamari S.
.
pages 30-33.
Bouzid Abderazak
.
Rouabah Zahir
.
Gabbay M.
.
Fantozzi Gilbert
.
pages 1-9.
Manasse Aboya Endong
.
pages 267-279.