Journal of New Technology and Materials
Volume 4, Numéro 1, Pages 9-10
2014-06-30
Authors : Sayad Yassine . Nouiri Abdelkader .
It’s known that indium gallium nitride InGaN alloys has a direct band gap varying from 0.7 to 3.4 eV which covers nearly the whole solar spectrum making it material of choice to make tandem solar cells. In other hand, it’s experimentally known that uses of InGaN/GaN multiple quantum well MQW structures in GaN based devices decreases surface recombination and, thus, enhances devices performance. Here, we present a simulation study of multiple quantum well MQW InGaN/GaN solar cells, where cell's active region is formed by a number of InGaN quantum wells (QWs) separated byGaN quantum barriers (QBs). We will present indium element content of InxGa1-xN wells and number of InGaN/GaN periods impacts on solar cell parameters.
solar cell, InGaN/GaN MQWs, photovoltaic parameters
N. Mokdad
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K. Zitouni
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A. Kadri
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pages 89-96.
Bouzid F.
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Hamlaoui L.
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pages 108-120.
Bekadja Mohamed-amine
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Mansour Belkacem
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Entasoltan Badra
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Osmani Soufi
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Amani Kamila
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Bouchama Samira
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Charef Leila
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Brahimi Mohamed
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Yafour Nabil
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pages 747-754.
Somanatha Arachchige Dilki Dias
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pages 39-48.
Chenine Chahrazad
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Sarnou Dallel
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pages 517-536.