Communication science et technologie
Volume 12, Numéro 1, Pages 161-170
2014-01-01

Modelling And Computer Of The Band Bending In Heterojunction With Intrinsic Thin Layer Solar Cells.



Authors : Rached Djaaffar .

Abstract

ABSTRACT Among the factors limiting the open circuit voltage of Heterojunctions with Intrinsic Thin layers "HIT" solar cell, the surface potential barrier at the Indium Tin Oxide (ITO)/hydrogenated amorphous silicon (a-Si:H) interface is one of the most important. To reduce this surface potential barrier, we have varied the band bending by simulation. The aim is to understand why, in spite of a considerable change in the front contact barrier height at the

Keywords

Simulation; HIT solar cells; potential barrier; band bending; Current-voltage J(V) characteristics.

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