Journal of Scientific Research
Volume 1, Numéro 1, Pages 10-14
2011-06-01
Authors : Dahbi N. . Daoudi M. . Belghachi M. .
The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.
Hg0.8Cd0.2Te semiconductor, degeneracy case, transport parameters, Monte Carlo simulation.
بوسالم أحلام
.
عابد يوسف
.
ص 117-132.
Yahia Zeghoudi
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pages 74-88.
Essalhi Meryem Yassamine
.
Haouam Lamia
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pages 638-653.
Djemil Mohamed Lamine
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Djemil Taoufik
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pages 5-8.
S. Guessasma S
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N. Rouag N
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pages 35-40.