Rеvuе des Energies Renouvelables
Volume 10, Numéro 2, Pages 273-279
2007-06-30
Influence Of Annealing Time On Structural And Electrical Properties Of Sb Doped Sno2 Films
Authors : Hemissi M. . Amardjia - Adnani H. . Plenet J.c. . Canut B. . Pelletier J.m. .
Abstract
Nanocrystalline 14 at % Sb-doped SnO2 films have been synthesized by a sol-gel method, to use them as solar cells electrodes. In this paper, we present a study of the annealing time of the films versus the increase of the particle size (varying from 6 nm to 19 nm) established by Scherer’s equation. We have also followed electrical resistance evolution with annealing temperature and time. An optimum value of 222 Ω/; was measured on a sample annealed at 500 °C for 2 h. The crystalline structure of the films was characterized and phases identified by X ray diffraction in grazing incidence. Their thickness has been measured by spectroscopic ellipsometry around 200 nm.
Keywords
Solar cell, SnO2, Sb, X Ray Diffraction, Nanocrystal, Nanostructure, Photovoltaic device, Electrical properties, Annealing, Thin layers.
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